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<p>Integrating a quantum light source with photonic circuits is crucial for reliable quantum photonics. Layered hexagonal boron nitride (hBN) has gained considerable interest as an excellent room-temperature quantum light emitter. However, high-temperature (&gt; 900 °C) thermal annealing is generally necessary to create defect emission in layered hBN, which poses a great challenge for photonic integration. Here, we report ultra-stable optical waveguides (Type T) fabricated by ultrafast laser direct writing within glass. The laser-induced local densification relying on the temperature gradient and pressure wave propagation, endows waveguides with ultra-high stability against high-temperature up to 1100&#xa0;°C, which provides a fascinating platform for integration of hBN emitters. We develop a waveguide/hBN butt-coupling integrated device. Efficient emissive defects are created in the integrated hBN with single pulse ultrafast laser irradiation a and the subsequent high temperature annealing at 950&#xa0;°C, and the emission can propagate through the waveguide due to the strong coupling between waveguide and hBN. These findings present a promising pathway towards scalable photonic chips for applications in integrated quantum photonics.</p>

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Ultra-stable waveguides for on-chip integration of hBN emitters

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年7月29日

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  • Peichao Wu,
  • ChenDuan Chen,
  • Yang Hong,
  • Zengling Li,
  • Chao Ruan,
  • Jianrong Qiu,
  • Dezhi Tan

摘要

Integrating a quantum light source with photonic circuits is crucial for reliable quantum photonics. Layered hexagonal boron nitride (hBN) has gained considerable interest as an excellent room-temperature quantum light emitter. However, high-temperature (> 900 °C) thermal annealing is generally necessary to create defect emission in layered hBN, which poses a great challenge for photonic integration. Here, we report ultra-stable optical waveguides (Type T) fabricated by ultrafast laser direct writing within glass. The laser-induced local densification relying on the temperature gradient and pressure wave propagation, endows waveguides with ultra-high stability against high-temperature up to 1100 °C, which provides a fascinating platform for integration of hBN emitters. We develop a waveguide/hBN butt-coupling integrated device. Efficient emissive defects are created in the integrated hBN with single pulse ultrafast laser irradiation a and the subsequent high temperature annealing at 950 °C, and the emission can propagate through the waveguide due to the strong coupling between waveguide and hBN. These findings present a promising pathway towards scalable photonic chips for applications in integrated quantum photonics.