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<p>The effects of rapid thermal annealing (RTA) temperature on the structural and electrical properties of 10&#xa0;nm-thick Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO) thin films were investigated. Structural analyses revealed that the films remained largely amorphous at low annealing temperatures and crystallized above 600&#xa0;°C, where the ferroelectric orthorhombic phase became dominant. At higher temperatures, the formation of the monoclinic phase was also observed. Electrical characterization demonstrated a strong dependence of ferroelectric behavior on annealing temperature. Films annealed near 600&#xa0;°C exhibited the most stable ferroelectric domains, strongest polarization switching, and most distinct hysteretic behavior, whereas higher temperatures led to a gradual degradation of the electrical response. These results indicate that an annealing temperature around 600&#xa0;°C provides the optimum condition for achieving enhanced ferroelectric performance in HZO thin films.</p>

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Structural and electrical characterization of Hf0.5Zr0.5O2 thin films crystallized by rapid thermal annealing

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年6月16日

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  • Jucheol Park,
  • Yeong Gyeong Park,
  • Min-Ho Kang,
  • Myung-Keun Lee,
  • Moon Seop Hyun

摘要

The effects of rapid thermal annealing (RTA) temperature on the structural and electrical properties of 10 nm-thick Hf0.5Zr0.5O2 (HZO) thin films were investigated. Structural analyses revealed that the films remained largely amorphous at low annealing temperatures and crystallized above 600 °C, where the ferroelectric orthorhombic phase became dominant. At higher temperatures, the formation of the monoclinic phase was also observed. Electrical characterization demonstrated a strong dependence of ferroelectric behavior on annealing temperature. Films annealed near 600 °C exhibited the most stable ferroelectric domains, strongest polarization switching, and most distinct hysteretic behavior, whereas higher temperatures led to a gradual degradation of the electrical response. These results indicate that an annealing temperature around 600 °C provides the optimum condition for achieving enhanced ferroelectric performance in HZO thin films.