<p>Compute-in-memory (CIM) has emerged as a promising solution to mitigate the data movement bottleneck in von Neumann architectures. While vertical NAND (V-NAND) flash memory has been explored for CIM, its structural constraints, including pass-bias overhead and interconnect parasitic capacitances, limit energy efficiency. In this work, we present a comprehensive comparison between V-NAND and vertical AND (V-AND) flash memory for CIM applications. Analytical modeling and experimental validation demonstrate that V-AND achieves superior energy efficiency, particularly with low-inference-count regimes and increased stack height, by eliminating the bias pass requirement. These results demonstrate that V-AND offers compelling advantages over V-NAND, establishing it as a promising candidate for energy-efficient, scalable, and fast CIM accelerators.</p> Graphical abstract

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Analysis of vertical AND flash memory for energy-efficient, scalable, fast CIM beyond vertical NAND flash memory

  • Jonghyun Ko,
  • Jiseong Im,
  • Sung-Ho Park,
  • Jahyun Gu,
  • Joonhyung Cho,
  • Joon Hwang,
  • Ryun-Han Koo,
  • Jangsaeng Kim,
  • Sung Yun Woo,
  • Jong-Ho Lee

摘要

Compute-in-memory (CIM) has emerged as a promising solution to mitigate the data movement bottleneck in von Neumann architectures. While vertical NAND (V-NAND) flash memory has been explored for CIM, its structural constraints, including pass-bias overhead and interconnect parasitic capacitances, limit energy efficiency. In this work, we present a comprehensive comparison between V-NAND and vertical AND (V-AND) flash memory for CIM applications. Analytical modeling and experimental validation demonstrate that V-AND achieves superior energy efficiency, particularly with low-inference-count regimes and increased stack height, by eliminating the bias pass requirement. These results demonstrate that V-AND offers compelling advantages over V-NAND, establishing it as a promising candidate for energy-efficient, scalable, and fast CIM accelerators.

Graphical abstract