Scholarlink

<p>Ultrawide-band-gap (UWBG) oxide semiconductors are emerging as key platforms for next-generation energy-efficient, high-power, and high-frequency electronics. Further performance gains require the discovery of alternative UWBG systems with band gaps well above 4&#xa0;eV, while offering intrinsically higher carrier mobility and controllable dopability. This paper highlights recent computational predictions and experimental advances toward such materials, with a focus on dopant activation, carrier density control, and phonon-limited mobility. Although computational screening has uncovered numerous promising candidates, most have yet to be realized as high-quality, single-crystalline thin films suitable for scalable devicefabrication. While epitaxial growth offers a unique platform to probe the intrinsic properties of these materials, the experimental realization is often limited by kinetic and processing constraints, such as nucleation dynamics and precise control of growth parameters. This gap often leads to significant deviations from the theoretical ground-state electrical transport properties. We examine the origins of these discrepancies and highlight integrated approaches, combining high-throughput computation with advanced epitaxial synthesis, to accelerate the development of next-generation UWBG oxide semiconductors.</p> Graphical abstract <p></p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Computational and experimental pathways to next-generation ultrawide-band-gap oxide semiconductors

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年2月4日

查看全文
  • Sieun Chae,
  • Jongin Kim,
  • Joshua R. Anderson,
  • Sanghyun Hong,
  • Yaser Mike Banad,
  • Hanjong Paik

摘要

Ultrawide-band-gap (UWBG) oxide semiconductors are emerging as key platforms for next-generation energy-efficient, high-power, and high-frequency electronics. Further performance gains require the discovery of alternative UWBG systems with band gaps well above 4 eV, while offering intrinsically higher carrier mobility and controllable dopability. This paper highlights recent computational predictions and experimental advances toward such materials, with a focus on dopant activation, carrier density control, and phonon-limited mobility. Although computational screening has uncovered numerous promising candidates, most have yet to be realized as high-quality, single-crystalline thin films suitable for scalable devicefabrication. While epitaxial growth offers a unique platform to probe the intrinsic properties of these materials, the experimental realization is often limited by kinetic and processing constraints, such as nucleation dynamics and precise control of growth parameters. This gap often leads to significant deviations from the theoretical ground-state electrical transport properties. We examine the origins of these discrepancies and highlight integrated approaches, combining high-throughput computation with advanced epitaxial synthesis, to accelerate the development of next-generation UWBG oxide semiconductors.

Graphical abstract