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<p>This study investigates the impact of dopants on Hf<sub>1–x</sub>Zr<sub>x</sub>O<sub>2</sub>-based capacitors for high-performance, hysteresis-free dielectric applications. Control of the crystalline structure of Hf<sub>1–x</sub>Zr<sub>x</sub>O<sub>2</sub> films is crucial for achieving superior dielectric properties. The tetragonal (t) phase of Hf<sub>1–x</sub>Zr<sub>x</sub>O<sub>2</sub> exhibits anti-ferroelectric (AFE) characteristics and shows promise due to its high dielectric constant (κ). However, hysteresis behavior in polarization–voltage sweeps due to AFE behavior presents a significant challenge, primarily due to the high energy loss when implemented in dynamic random-access-memory (DRAM) applications. To achieve hysteresis-free operation, this study focuses on suppressing AFE switching within the DRAM voltage range through Si or La doping in Hf<sub>1–x</sub>Zr<sub>x</sub>O<sub>2</sub> films. Introducing small amounts of Si or La (&lt; 1%) into Hf<sub>1–x</sub>Zr<sub>x</sub>O<sub>2</sub> capacitors effectively diminishes AFE switching by influencing which structural phases are favored: Si doping tends to favor the amorphous phase, while La doping promotes the formation of the t-phase. La doping shows particular promise in enhancing pseudo-linear dielectric performance. ~ 0.9% La-doped Hf<sub>0.25</sub>Zr<sub>0.75</sub>O<sub>2</sub> capacitors exhibit a markedly improved equivalent oxide thickness (EOT) of ~ 4.8&#xa0;Å and a reduced leakage current density (J<sub>leak</sub>) of ~ 10<sup>–7</sup> A/cm<sup>2</sup> at 1&#xa0;V, achieved at back-end-of-line (BEOL) compatible temperatures (&lt; 400&#xa0;°C). These results demonstrate a promising strategy for advancing energy-efficient high-κ dielectric materials in next-generation memory devices, offering a balanced combination of high capacitance, low leakage current, and BEOL compatibility.</p> Graphical Abstract <p></p>

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Effect of La and Si additives in Zr-doped HfO2 capacitors for pseudo-linear high-κ dielectric applications

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年3月6日

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  • Minjong Lee,
  • Yong Chan Jung,
  • Jin-Hyun Kim,
  • Dushyant M. Narayan,
  • Sehun Kang,
  • Woo Young Park,
  • Kivin Im,
  • Jiyoung Kim

摘要

This study investigates the impact of dopants on Hf1–xZrxO2-based capacitors for high-performance, hysteresis-free dielectric applications. Control of the crystalline structure of Hf1–xZrxO2 films is crucial for achieving superior dielectric properties. The tetragonal (t) phase of Hf1–xZrxO2 exhibits anti-ferroelectric (AFE) characteristics and shows promise due to its high dielectric constant (κ). However, hysteresis behavior in polarization–voltage sweeps due to AFE behavior presents a significant challenge, primarily due to the high energy loss when implemented in dynamic random-access-memory (DRAM) applications. To achieve hysteresis-free operation, this study focuses on suppressing AFE switching within the DRAM voltage range through Si or La doping in Hf1–xZrxO2 films. Introducing small amounts of Si or La (< 1%) into Hf1–xZrxO2 capacitors effectively diminishes AFE switching by influencing which structural phases are favored: Si doping tends to favor the amorphous phase, while La doping promotes the formation of the t-phase. La doping shows particular promise in enhancing pseudo-linear dielectric performance. ~ 0.9% La-doped Hf0.25Zr0.75O2 capacitors exhibit a markedly improved equivalent oxide thickness (EOT) of ~ 4.8 Å and a reduced leakage current density (Jleak) of ~ 10–7 A/cm2 at 1 V, achieved at back-end-of-line (BEOL) compatible temperatures (< 400 °C). These results demonstrate a promising strategy for advancing energy-efficient high-κ dielectric materials in next-generation memory devices, offering a balanced combination of high capacitance, low leakage current, and BEOL compatibility.

Graphical Abstract