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<p>Metal-oxide thin-film semiconductors have been highlighted as next-generation space semiconductors owing to their excellent radiation hardness based on their dimensional advantages of very low thickness and insensitivity to crystal structure. However, thin-film transistors (TFTs) do not exhibit intrinsic radiation hardness owing to the chemical reactions at the interface exposed to ambient air. In this study, significantly enhanced radiation hardness of Al<sub>2</sub>O<sub>3</sub>-passivated ZnO TFTs against high-energy protons with energies of up to 100&#xa0;MeV is obtained owing to the passivation layer blocking interactions with external reactants, thereby maintaining the chemical stability of the thin-film semiconductor. These results highlight the potential of passivated metal-oxide thin films for developing reliable radiation-hardened semiconductor devices that can be used in harsh space environments. In addition, the relationship between low-frequency noise and defects due to oxygen vacancies was revealed, which can be utilized to improve device reliability.</p>

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Enhanced high-energy proton radiation hardness of ZnO thin-film transistors with a passivation layer

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年1月30日

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  • Yongsu Lee,
  • Hae-Won Lee,
  • Su Jin Kim,
  • Jeong Min Park,
  • Byoung Hun Lee,
  • Chang Goo Kang

摘要

Metal-oxide thin-film semiconductors have been highlighted as next-generation space semiconductors owing to their excellent radiation hardness based on their dimensional advantages of very low thickness and insensitivity to crystal structure. However, thin-film transistors (TFTs) do not exhibit intrinsic radiation hardness owing to the chemical reactions at the interface exposed to ambient air. In this study, significantly enhanced radiation hardness of Al2O3-passivated ZnO TFTs against high-energy protons with energies of up to 100 MeV is obtained owing to the passivation layer blocking interactions with external reactants, thereby maintaining the chemical stability of the thin-film semiconductor. These results highlight the potential of passivated metal-oxide thin films for developing reliable radiation-hardened semiconductor devices that can be used in harsh space environments. In addition, the relationship between low-frequency noise and defects due to oxygen vacancies was revealed, which can be utilized to improve device reliability.