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Abstract <p>The work presents studies of the temperature dependences of the coefficients of linear thermal expansion (CLTE) of effective thermoelectric materials Si<sub>0.8</sub>Ge<sub>0.2</sub> (1.8 wt % P) and Si<sub>0.8</sub>Ge<sub>0.2</sub> (0.8&#xa0;wt&#xa0;% B), which are synthesized by induction melting, and nanostructured thermoelectric materials obtained by spark plasma sintering. The density of the nanostructured thermoelectric materials (2.94 g/cm<sup>3</sup>) is 98% of the density of the synthesized thermoelectric materials (2.99 g/cm<sup>3</sup>). The synthesized and nanostructured thermoelectric materials have similar Vickers microhardness values of ~1100 <i>H</i><sub>V</sub>. The CLTE value of the nanostructured thermoelectric materials is 2–3% higher than that of the synthesized thermoelectric materials. The temperature dependences of the CLTE are similar in nature and are within the range of 3.84 × 10<sup>–6</sup> up to 4.71&#xa0;× 10<sup>–6</sup> K<sup>–1</sup>. For <i>n</i>- and <i>p</i>-type SiGe, the values of the CLTE are almost identical.</p>

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Study of the Temperature Dependences of the Thermal Expansion Coefficients of Thermoelectric Materials Based on SiGe

  • 期刊论文

  • 发表日期：

    2025年6月1日

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  • Yu. I. Shtern,
  • M. S. Rogachev,
  • M. Yu. Shtern,
  • A. A. Sherchenkov,
  • N. Yu. Tabachkova,
  • B. R. Mustafoev

摘要

Abstract

The work presents studies of the temperature dependences of the coefficients of linear thermal expansion (CLTE) of effective thermoelectric materials Si0.8Ge0.2 (1.8 wt % P) and Si0.8Ge0.2 (0.8 wt % B), which are synthesized by induction melting, and nanostructured thermoelectric materials obtained by spark plasma sintering. The density of the nanostructured thermoelectric materials (2.94 g/cm3) is 98% of the density of the synthesized thermoelectric materials (2.99 g/cm3). The synthesized and nanostructured thermoelectric materials have similar Vickers microhardness values of ~1100 HV. The CLTE value of the nanostructured thermoelectric materials is 2–3% higher than that of the synthesized thermoelectric materials. The temperature dependences of the CLTE are similar in nature and are within the range of 3.84 × 10–6 up to 4.71 × 10–6 K–1. For n- and p-type SiGe, the values of the CLTE are almost identical.