Scholarlink

Abstract <p>Memristive structures of Ti/HfO<sub>2</sub>/Au/<i>c</i>-Si, which are characterized by high ductility, are studied using the impedance spectroscopy method. Impedance hodographs are obtained for several stable resistive states. An equivalent circuit is proposed that takes into account the change in the resistance of filaments during their growth and allows for a good description of the observed changes in the type of the hodograph. Using simulation, the numerical values of the equivalent-circuit parameters are calculated. It is shown that during the switching process a significant change in the capacitance of the structure occurs. The data obtained allow us to better understand the processes that occur in such structures during switching, and open up the possibility of creating elements in which both resistance and capacitance can be controllably changed simultaneously.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Impedance Spectroscopy of Memristive Structures Based on Hafnium Oxide

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年2月1日

查看全文
  • M. N. Martyshov,
  • I. D. Kuchumov,
  • B. S. Shvetsov,
  • D. M. Zhigunov,
  • A. S. Ilyin,
  • P. A. Forsh,
  • P. K. Kashkarov

摘要

Abstract

Memristive structures of Ti/HfO2/Au/c-Si, which are characterized by high ductility, are studied using the impedance spectroscopy method. Impedance hodographs are obtained for several stable resistive states. An equivalent circuit is proposed that takes into account the change in the resistance of filaments during their growth and allows for a good description of the observed changes in the type of the hodograph. Using simulation, the numerical values of the equivalent-circuit parameters are calculated. It is shown that during the switching process a significant change in the capacitance of the structure occurs. The data obtained allow us to better understand the processes that occur in such structures during switching, and open up the possibility of creating elements in which both resistance and capacitance can be controllably changed simultaneously.