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Abstract <p>The results of a study of the microstructure of Al–Si alloys of eutectic and hypereutectic compositions, alloyed with Mg, Mn, Fe, Ni and Cu and produced by ultra-rapid quenching from the melt, are presented. It is shown that in near‑eutectic alloys alloying with these metals does not modify the morphology of the plate‑like silicon inclusions. It was found that multicomponent alloying combined with rapid solidification of hypereutectic silumins leads to modification of the eutectic silicon inclusions. In the hypereutectic silumins the size of the primary eutectic silicon inclusions does not exceed 2 μm, and the eutectic Si inclusions adopt a globular configuration with sizes up to 300 nm. A mechanism is proposed for the modification of the eutectic silicon inclusions that takes into account the formation of crystalline nuclei of eutectic silicon on the surfaces of primary silicon particles, the limitation of the silicon phase growth rate due to the formation of metal nanoclusters and their compounds on the growing interface, and the high concentration and growth rate of α-Al.</p>

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Formation of Nano-Sized Si Inclusions in Doped Al–Si Alloy at High-Speed Solidification

  • 期刊论文

  • 发表日期：

    2026年5月18日

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  • V. G. Shepelevich,
  • O. V. Gusakova

摘要

Abstract

The results of a study of the microstructure of Al–Si alloys of eutectic and hypereutectic compositions, alloyed with Mg, Mn, Fe, Ni and Cu and produced by ultra-rapid quenching from the melt, are presented. It is shown that in near‑eutectic alloys alloying with these metals does not modify the morphology of the plate‑like silicon inclusions. It was found that multicomponent alloying combined with rapid solidification of hypereutectic silumins leads to modification of the eutectic silicon inclusions. In the hypereutectic silumins the size of the primary eutectic silicon inclusions does not exceed 2 μm, and the eutectic Si inclusions adopt a globular configuration with sizes up to 300 nm. A mechanism is proposed for the modification of the eutectic silicon inclusions that takes into account the formation of crystalline nuclei of eutectic silicon on the surfaces of primary silicon particles, the limitation of the silicon phase growth rate due to the formation of metal nanoclusters and their compounds on the growing interface, and the high concentration and growth rate of α-Al.