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Abstract <p>The paper proposes an innovative method for express assessment of the InGaAs/InP epitaxial structure parameters with SCAM architecture. As the result of the work, an InGaAs/InP heterostructure was grown, models for verification were developed, tests were performed to assess the characteristics of the epitaxial structure and real characteristics were compared with simulated results.</p>

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Methodology for Heterostructures Quality Checking

  • 期刊论文

  • 发表日期：

    2025年12月8日

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  • O. I. Rabinovich,
  • E. I. Kobzev,
  • V. V. Borichok,
  • A. A. Savchuk,
  • V. O. Atyunin,
  • M. N. Orlova,
  • Yu. V. Osipov,
  • I. V. Borzykh

摘要

Abstract

The paper proposes an innovative method for express assessment of the InGaAs/InP epitaxial structure parameters with SCAM architecture. As the result of the work, an InGaAs/InP heterostructure was grown, models for verification were developed, tests were performed to assess the characteristics of the epitaxial structure and real characteristics were compared with simulated results.