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<p><b>Abstract</b>—Data on the coefficient of linear thermal expansion of materials based on silicon nitride synthesized by reaction sintering, liquid phase sintering, and hot pressing in the temperature range of 20–1400°C are reported. A comparative estimation of the thermal expansion of materials based on silicon nitride and carbide is carried out. Silicon nitride materials have the coefficient of linear thermal expansion lower by a factor of 1.5–2.0 than that of silicon carbide materials owing to the formation of the SiAlON phase characterized by the low linear thermal expansion.</p>

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Study of Coefficient of Thermal Expansion of Materials Based on Silicon Nitride

  • 期刊论文

  • 发表日期：

    2025年2月1日

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  • S. N. Perevislov,
  • M. V. Tomkovich

摘要

Abstract—Data on the coefficient of linear thermal expansion of materials based on silicon nitride synthesized by reaction sintering, liquid phase sintering, and hot pressing in the temperature range of 20–1400°C are reported. A comparative estimation of the thermal expansion of materials based on silicon nitride and carbide is carried out. Silicon nitride materials have the coefficient of linear thermal expansion lower by a factor of 1.5–2.0 than that of silicon carbide materials owing to the formation of the SiAlON phase characterized by the low linear thermal expansion.