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Abstract <p>This paper presents a method for determining the degree of cristobalitization of synthetic silicon dioxide grains of special purity, obtained from tetraethoxysilane using sol-gel technology, through IR Fourier spectroscopy with the use of an attenuated total internal reflection attachment. The results of measuring the degree of cristobalitization of synthetic silicon dioxide grains of special purity produced by Perm Scientific and Production Instrument-Making Company are presented. The linear dependence of the degree of cristobalitization on the grain size of cristobalite grits is shown.</p>

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Determination of the Degree of Cristobalitization of Synthetic Quartz Grids of Special Purity by IR Spectroscopy

  • 期刊论文

  • 发表日期：

    2025年2月1日

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  • D. V. Piankov,
  • A. V. Fofanov,
  • K. N. Generalova,
  • N. A. Medvedeva

摘要

Abstract

This paper presents a method for determining the degree of cristobalitization of synthetic silicon dioxide grains of special purity, obtained from tetraethoxysilane using sol-gel technology, through IR Fourier spectroscopy with the use of an attenuated total internal reflection attachment. The results of measuring the degree of cristobalitization of synthetic silicon dioxide grains of special purity produced by Perm Scientific and Production Instrument-Making Company are presented. The linear dependence of the degree of cristobalitization on the grain size of cristobalite grits is shown.