Fabrication of SnNb2O6/g-C3N4 Heterostructure for Enhanced Supercapacitor Energy Storage
摘要
The advancement of heterostructure materials is vital for improving supercapacitor performance. 2D graphitic carbon nitride (g-C3N4) has drawn interest in energy storage owing to its layered structure, tunable bandgap, metal-free nature, high stability, low cost, and simple synthesis. Composite materials are also widely explored for their versatile properties. Herein, SnNb2O6/g-C3N4 heterostructure was synthesized via hydrothermal method and characterized by XRD, Raman spectroscopy, FE-SEM, and TEM for detailed structural and morphological analysis. Electrochemical properties were analyzed using cyclic voltammetry, galvanostatic cycling, and impedance spectroscopy. The SnNb2O6/g-C3N4 heterostructure exhibits an enhanced specific capacitance (217 F/g at 10 mV/s, 172 F/g at 0.5 A/g) than SnNb2O6 alone, demonstrating its strong potential as an electrode material in supercapacitor devices.