Scholarlink

Abstract <p>By doping zinc with transition metals (Ag + Fe + Cu), the following targets were formed: Zn/Ag/Fe/Cu (Zn95, Ag2, Fe2, Cu 1%; Zn94, Ag2, Fe2, Cu2% and Zn92, Ag2, Fe3, Cu3%). Targets with insignificant changes in the Zn lattice parameters were obtained. Nanosized ZnO/Ag/Fe/Cu films with <i>p</i>-type conductivity on glass substrates at room temperature were formed by DC-magnetron sputtering of Zn/Ag/Fe/Cu targets at about 0.666 Pa. The structural, electrophysical, optical, and morphological characteristics of the obtained films were investigated using X-ray diffractometry (XRD), atomic force microscopy, UV/VIS spectroscopy, and Hall measurements. The diffraction patterns of the ZnO/Ag/Fe/Cu films revealed characteristic reflexes of interplanar spacings along the 002 and 101, as well as 100 and 010 crystallographic directions. The transmittance of the studied films was approximately 85–97% in the wavelength range of 460–930 nm. The concentration of free carriers in the ZnO/Ag/Fe/Cu films was approximately 10<sup>21</sup> cm<sup>–3</sup>. The ZnO/Ag/Fe/Cu films can be integrated into optoelectronic devices as functional elements.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Structural Design of Zn/Ag/Fe/Cu Targets and Formation of ZnO/Ag/Fe/Cu Thin Films of p-Type Conductivity by the DC-Magnetron Method at Room Temperature

  • 期刊论文

  • 发表日期：

    2025年12月1日

查看全文
  • E. R. Arakelova,
  • S. L. Grigoryan,
  • A. A. Mirzoian,
  • A. B. Mirzoian,
  • L. M. Savchenko,
  • A. M. Khachatryan,
  • M. S. Yeranosyan

摘要

Abstract

By doping zinc with transition metals (Ag + Fe + Cu), the following targets were formed: Zn/Ag/Fe/Cu (Zn95, Ag2, Fe2, Cu 1%; Zn94, Ag2, Fe2, Cu2% and Zn92, Ag2, Fe3, Cu3%). Targets with insignificant changes in the Zn lattice parameters were obtained. Nanosized ZnO/Ag/Fe/Cu films with p-type conductivity on glass substrates at room temperature were formed by DC-magnetron sputtering of Zn/Ag/Fe/Cu targets at about 0.666 Pa. The structural, electrophysical, optical, and morphological characteristics of the obtained films were investigated using X-ray diffractometry (XRD), atomic force microscopy, UV/VIS spectroscopy, and Hall measurements. The diffraction patterns of the ZnO/Ag/Fe/Cu films revealed characteristic reflexes of interplanar spacings along the 002 and 101, as well as 100 and 010 crystallographic directions. The transmittance of the studied films was approximately 85–97% in the wavelength range of 460–930 nm. The concentration of free carriers in the ZnO/Ag/Fe/Cu films was approximately 1021 cm–3. The ZnO/Ag/Fe/Cu films can be integrated into optoelectronic devices as functional elements.