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Abstract <p>The structure, morphology, and dielectric properties of polycrystalline samples of the borate compound BaZr(BO<sub>3</sub>)<sub>2</sub> synthesized by the method of solid-phase reactions were studied. The effect of thermal annealing in the temperature range of 1000–1250°C on the grain morphology, porosity, bulk density, and dielectric properties of the BaZr(BO<sub>3</sub>)<sub>2</sub> samples was investigated. The dielectric properties were investigated in the radio frequency range of 1–10 MHz. The frequency dependences of the dielectric constant and dielectric loss, and the effect of annealing temperature on these dependences were analyzed. For the sample with the highest bulk density (annealed at 1250°C for 2 hours), the dielectric constant and dielectric loss at 1 MHz were found to be 22.36 and 1.05 × 10<sup>–2</sup>, respectively. The synthesized ceramics BaZr(BO<sub>3</sub>)<sub>2</sub> can be considered as a promising material for the preparation of substrates for integrated circuits and ceramic capacitors.</p>

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Solid-Phase Synthesis and Dielectric Properties of BaZr(BO3)2 Ceramics

  • 期刊论文

  • 发表日期：

    2025年9月1日

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  • A. K. Kostanyan,
  • K. A. Sargsyan,
  • G. S. Karakhanyan,
  • A. A. Muradyan,
  • A. N. Avagyan,
  • V. S. Harutyunyan

摘要

Abstract

The structure, morphology, and dielectric properties of polycrystalline samples of the borate compound BaZr(BO3)2 synthesized by the method of solid-phase reactions were studied. The effect of thermal annealing in the temperature range of 1000–1250°C on the grain morphology, porosity, bulk density, and dielectric properties of the BaZr(BO3)2 samples was investigated. The dielectric properties were investigated in the radio frequency range of 1–10 MHz. The frequency dependences of the dielectric constant and dielectric loss, and the effect of annealing temperature on these dependences were analyzed. For the sample with the highest bulk density (annealed at 1250°C for 2 hours), the dielectric constant and dielectric loss at 1 MHz were found to be 22.36 and 1.05 × 10–2, respectively. The synthesized ceramics BaZr(BO3)2 can be considered as a promising material for the preparation of substrates for integrated circuits and ceramic capacitors.