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Abstract <p>The influence of a black silicon (b-Si) interlayer on the photovoltaic characteristics of tandem perovskite/silicon cells was investigated by numerical modeling in the SCAPS-1D software environment. It is shown that a 640 nm thick nanotextured b-Si interlayer increases the efficiency of the modeled device from 27.17 to 28.97%. The primary contribution to the efficiency gain is attributed to an increase in short-circuit current density, resulting from exceptionally low reflection and enhanced light trapping in the bottom silicon subcell. The qualitative agreement between the simulation results and the experiment, as well as the dominant contribution of optical effects to the observed performance improvement, is demonstrated. Using parametric analysis, the optimal thickness of the b-Si interlayer (∼530 nm) was determined, ensuring current matching between the subcells and a maximum efficiency of 29%.</p>

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Simulation of Tandem Perovskite/Silicon Solar Cell Characteristics with a Black Silicon Interlayer

  • 期刊论文

  • 发表日期：

    2025年9月1日

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  • G. Y. Ayvazyan,
  • L. M. Lakhoyan,
  • A. Usman

摘要

Abstract

The influence of a black silicon (b-Si) interlayer on the photovoltaic characteristics of tandem perovskite/silicon cells was investigated by numerical modeling in the SCAPS-1D software environment. It is shown that a 640 nm thick nanotextured b-Si interlayer increases the efficiency of the modeled device from 27.17 to 28.97%. The primary contribution to the efficiency gain is attributed to an increase in short-circuit current density, resulting from exceptionally low reflection and enhanced light trapping in the bottom silicon subcell. The qualitative agreement between the simulation results and the experiment, as well as the dominant contribution of optical effects to the observed performance improvement, is demonstrated. Using parametric analysis, the optimal thickness of the b-Si interlayer (∼530 nm) was determined, ensuring current matching between the subcells and a maximum efficiency of 29%.