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Abstract <p>The optical and electrical properties of silver-doped ZnO (AgZnO) films with Ag concentrations of 0.05 and 0.24 at % were analyzed using XRD, EDS, resistance, transmittance and reflectance measurements. The 0.05 at % AgZnO and as-deposited 0.24 at % AgZnO films exhibited <i>n</i>-type doping, whereas the annealed 0.24 at % AgZnO films showed <i>p</i>-type doping. The crystallite sizes of the 0.05 and 0.24 at % AgZnO films were 24 and 28 nm. The redshift of the band gap was 0.02 eV for 0.24 at % AgZnO. The sample with 0.24 at % Ag exhibits a polaron features in the range 900–3700&#xa0;cm<sup>–1</sup>, and demonstrated a paramagnetic-to-diamagnetic transition. The 0.05 at % AgZnO film showed a negative temperature coefficient of resistivity. These findings suggest that a 0.24 at % Ag concentration is favorable for achieving p-type doping in ZnO and for the formation of polarons, whereas the 0.05 at % AgZnO film could be used for thermal sensing applications.</p>

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Optical and Electrical Properties of Silver-Doped Zinc Oxide Films

  • 期刊论文

  • 发表日期：

    2025年9月1日

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  • N. Aghamalyan,
  • R. Hovsepyan,
  • M. Nersisyan,
  • S. Petrosyan,
  • G. Badalyan,
  • I. Gambaryan,
  • A. Poghosyan,
  • Y. Kafadaryan

摘要

Abstract

The optical and electrical properties of silver-doped ZnO (AgZnO) films with Ag concentrations of 0.05 and 0.24 at % were analyzed using XRD, EDS, resistance, transmittance and reflectance measurements. The 0.05 at % AgZnO and as-deposited 0.24 at % AgZnO films exhibited n-type doping, whereas the annealed 0.24 at % AgZnO films showed p-type doping. The crystallite sizes of the 0.05 and 0.24 at % AgZnO films were 24 and 28 nm. The redshift of the band gap was 0.02 eV for 0.24 at % AgZnO. The sample with 0.24 at % Ag exhibits a polaron features in the range 900–3700 cm–1, and demonstrated a paramagnetic-to-diamagnetic transition. The 0.05 at % AgZnO film showed a negative temperature coefficient of resistivity. These findings suggest that a 0.24 at % Ag concentration is favorable for achieving p-type doping in ZnO and for the formation of polarons, whereas the 0.05 at % AgZnO film could be used for thermal sensing applications.