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Abstract <p>A “hard” LLL interferometer made of dislocation-free silicon single crystal has been investigated; it differs significantly from previously known types of X-ray interferometers. Such an interferometer is highly sensitive to both initially present and introduced defects in the crystal. Several dislocations were generated in the modified part of the interferometer’s mirror block, as confirmed by X-ray topograms. Interferometric images of dislocations generated in the mirror block were obtained. The numerical simulation of single edge dislocation imaging is carried out according to the considered scheme.</p>

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X-Ray Interferometric Imaging of Dislocations Generated in “Hard” LLL Interferometer

  • 期刊论文

  • 发表日期：

    2025年6月1日

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  • T. H. Eyramjyan,
  • T. S. Mnatsakanyan,
  • L. A. Haroutunyan

摘要

Abstract

A “hard” LLL interferometer made of dislocation-free silicon single crystal has been investigated; it differs significantly from previously known types of X-ray interferometers. Such an interferometer is highly sensitive to both initially present and introduced defects in the crystal. Several dislocations were generated in the modified part of the interferometer’s mirror block, as confirmed by X-ray topograms. Interferometric images of dislocations generated in the mirror block were obtained. The numerical simulation of single edge dislocation imaging is carried out according to the considered scheme.