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<p><b>Abstract</b>—The paper considers physical and technological methods for preparing the surface of single-crystal indium antimonide (InSb) for molecular beam processes of synthesis of photosensitive layers. The influence of the main parameters of the grinding processes, pre-finish polishing with an abrasive suspension and final chemical-mechanical polishing on the surface quality, and the main parameters of plane-parallelism of InSb substrate plates was studied. As a result, surface morphology and subnano-rough relief (<i>R</i><sub>a</sub> ≤ 0.5 nm) were achieved on InSb wafers with a diameter of 50.8 mm, meeting the requirements of molecular beam epitaxy (MBE). An experimental technique for monitoring the quality and morphology of the surface, the main parameters of plane-parallelism of InSb semiconductor substrates, depending on changes in the main parameters of the surface treatment process, has been developed.</p>

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Processing of InSb Substrates to Achieve Surface Morphology Suitable for Molecular Beam Epitaxy

  • 期刊论文

  • 发表日期：

    2025年6月1日

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  • A. A. Trofimov,
  • R. Yu. Kozlov,
  • V. S. Krivobok,
  • V. V. Lopatin,
  • V. A. Ulkarov,
  • E. V. Molodtsova,
  • P. V. Pavlov,
  • O. S. Pavlova,
  • A. M. Kosyakova,
  • N. Yu. Komarovskii,
  • M. S. Nestyurkin,
  • A. V. Klekovkin,
  • I. I. Minaev,
  • V. V. Eroshenkov,
  • A. S. Atrashkov,
  • Ya. A. Kovin,
  • I. N. Miroshnikova

摘要

Abstract—The paper considers physical and technological methods for preparing the surface of single-crystal indium antimonide (InSb) for molecular beam processes of synthesis of photosensitive layers. The influence of the main parameters of the grinding processes, pre-finish polishing with an abrasive suspension and final chemical-mechanical polishing on the surface quality, and the main parameters of plane-parallelism of InSb substrate plates was studied. As a result, surface morphology and subnano-rough relief (Ra ≤ 0.5 nm) were achieved on InSb wafers with a diameter of 50.8 mm, meeting the requirements of molecular beam epitaxy (MBE). An experimental technique for monitoring the quality and morphology of the surface, the main parameters of plane-parallelism of InSb semiconductor substrates, depending on changes in the main parameters of the surface treatment process, has been developed.