Abstract
Background. Currently, methods for contactless control of the dielectric properties of semiconductor nanostructures and the matrix surrounding them evoke considerable interest. Optical modulation of the permittivity in combination with controlled tunneling processes enables targeted modification of the properties of low-dimensional structures and, consequently, optimization of the characteristics of semiconductor nanoelectronic devices. In this regard, semiconductor quantum dots (QDs) tunnel-coupled to the surrounding matrix are interesting, since in such structures the \({{A}^{ + }} + e\) impurity complexes can form, the photoexcitation of which can significantly change the permittivity of a QD material, i.e., induce the photodielectric effect (PDE). The aim of this study is to theoretically investigate the effect of the tunnel transparency of the potential barrier on the PDE related to the excitation of the \({{A}^{ + }} + e\) impurity complexes in quasi-zero-dimensional structures in an external magnetic field. Materials and methods. The relative permittivity change (RPC) has been calculated in the dipole approximation. The field dependence of the RPC has been plotted for InSb QDs. The numerical calculation and plotting have been performed using the Mathcad 14.0 and Wolfram Mathematica 10.2 numerical systems. Results. The dependences of the RPC in a quasi-zero-dimensional semiconductor nanostructure on external magnetic field and 1D dissipative tunneling parameters have been studied in the dipole approximation. The PDE dichroism related to the presence of an external magnetic field has been revealed. It is shown that an external magnetic field suppresses the PDE, which is associated with the increased localization of the electron wave function in a magnetic field and with a modification of the electron adiabatic potential. It is demonstrated that the RPC value depends on the parameters of dissipative 1D tunneling. Conclusions. In a magnetic field, the PDE can be effectively controlled by modifying the electron adiabatic potential and the electron wave function via changing the dissipative tunneling parameters.
