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Abstract <p>In the article, an approximate method is proposed for calculating the energy spectrum of donor impurities in layered PbJ<sub>2</sub> semiconductor, taking into account the anisotropy of the effective mass of electrons. It is shown that a change in the degree of anisotropy leads to a notable displacement of the levels of ionization and a change in the energy spectrum of donor states. Comparison with known experimental data has confirmed the reliability of the proposed model, with discrepancies not exceeding 8–10%. The established regularities possess a universal character and can be applied for analysis of analogous compounds of PbI<sub>2</sub>, PbBr<sub>2</sub>, and SnS<sub>2</sub> type. The obtained results have practical meaning for prognosis of the electronic properties and optimization of the parameters of semiconducting nanostructures.</p>

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The Influence of Anisotropy of Mass on the Energy Spectrum of Donor Impurities in PbJ2

  • 期刊论文

  • 发表日期：

    2025年10月1日

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  • S. N. Sarmasov

摘要

Abstract

In the article, an approximate method is proposed for calculating the energy spectrum of donor impurities in layered PbJ2 semiconductor, taking into account the anisotropy of the effective mass of electrons. It is shown that a change in the degree of anisotropy leads to a notable displacement of the levels of ionization and a change in the energy spectrum of donor states. Comparison with known experimental data has confirmed the reliability of the proposed model, with discrepancies not exceeding 8–10%. The established regularities possess a universal character and can be applied for analysis of analogous compounds of PbI2, PbBr2, and SnS2 type. The obtained results have practical meaning for prognosis of the electronic properties and optimization of the parameters of semiconducting nanostructures.