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Abstract <p>The Au/<i>n</i>-Si Schottky contacts are formed using the ultrafast laser-induced forward transfer method for laser fluence of 7.8–25.9 J/cm<sup>2</sup>. It is shown that the minimal energy ensures the lowest content of oxygen at the interface, a barrier height of ~0.60 eV, and the nonideality index close to unity, indicating the predominance of thermionic emission. An increase in this energy leads to oxidation, an increase in the barrier heterogeneity, and degradation of rectifying properties despite the apparent increase in the calculated barrier height.</p>

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Ultrafast Laser-Induced Forward Gold Transfer for Spatially Selective Formation of Schottky Contacts on n-Type Silicon

  • 期刊论文

  • 发表日期：

    2026年1月1日

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  • M. S. Kovalev,
  • E. V. Ulturgasheva,
  • S. P. Babina,
  • I. A. Voronov,
  • I. M. Podlesnykh,
  • G. K. Krasin

摘要

Abstract

The Au/n-Si Schottky contacts are formed using the ultrafast laser-induced forward transfer method for laser fluence of 7.8–25.9 J/cm2. It is shown that the minimal energy ensures the lowest content of oxygen at the interface, a barrier height of ~0.60 eV, and the nonideality index close to unity, indicating the predominance of thermionic emission. An increase in this energy leads to oxidation, an increase in the barrier heterogeneity, and degradation of rectifying properties despite the apparent increase in the calculated barrier height.