Scholarlink

Abstract <p>In this work, a study was carried out of CdS:Cu single crystals, which are characterized by different levels of their own defects. It is shown that copper is introduced into the crystal lattice as an acceptor impurity and, within the limits of its solubility, leads to a change in the type of electrical conductivity from electron to hole. It was found that varying the time of thermal diffusion alloying, the process temperature, and the copper concentration significantly affects the concentration and electroactivity of impurity atoms. This, in turn, results in obtaining samples with specific resistance in a wide range of values from <InlineEquation ID="IEq1"> <EquationSource Format="TEX">\({{10}^{{ - 1}}}\)</EquationSource> <!--PhysSoSt2660031Mammadov-m1--> </InlineEquation> to <InlineEquation ID="IEq2"> <EquationSource Format="TEX">\({{10}^{9}}\;\Omega \;{\text{m}}\)</EquationSource> <!--PhysSoSt2660031Mammadov-m2--> </InlineEquation>. It was additionally revealed that modification of the concentration of intrinsic defects and impurities allows targeted control of conductivity parameters and optimization of the electrical characteristics of the material. The obtained results have practical significance for the development and improvement of semiconductor devices operating under conditions requiring stable and predictable hole conductivity properties.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

The Effect of Thermal-Diffusion Doping on CdS:Cu Single Crystals

  • 期刊论文

  • 发表日期：

    2026年4月13日

查看全文
  • Huseyn Mikail Mammadov,
  • Suleyman Nuslat Sarmasov

摘要

Abstract

In this work, a study was carried out of CdS:Cu single crystals, which are characterized by different levels of their own defects. It is shown that copper is introduced into the crystal lattice as an acceptor impurity and, within the limits of its solubility, leads to a change in the type of electrical conductivity from electron to hole. It was found that varying the time of thermal diffusion alloying, the process temperature, and the copper concentration significantly affects the concentration and electroactivity of impurity atoms. This, in turn, results in obtaining samples with specific resistance in a wide range of values from \({{10}^{{ - 1}}}\) to \({{10}^{9}}\;\Omega \;{\text{m}}\) . It was additionally revealed that modification of the concentration of intrinsic defects and impurities allows targeted control of conductivity parameters and optimization of the electrical characteristics of the material. The obtained results have practical significance for the development and improvement of semiconductor devices operating under conditions requiring stable and predictable hole conductivity properties.