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Abstract <p>This study systematically investigates the static and dynamic behaviors of <i>p</i>-GaN-gate high electron mobility transistors (HEMTs) incorporating two distinct back barrier compositions: the conventional Al<sub>0.05</sub>Ga<sub>0.95</sub>N and a In<sub>0.1</sub>Ga<sub>0.9</sub>N layer. Both devices are designed with identical geometries, featuring a gate length of 1.2 μm. The InGaN back barrier HEMT consistently delivers superior output current (<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\({{I}_{{\text{D}}}}\)</EquationSource> <!--PhysSoSt2560381Gowtham-m1--> </InlineEquation>) and transconductance (<InlineEquation ID="IEq2"> <EquationSource Format="TEX">\({{g}_{m}}\)</EquationSource> <!--PhysSoSt2560381Gowtham-m2--> </InlineEquation>) compared to its AlGaN counterpart, reaching peak values of approximately 0.82&#xa0;A/mm and 0.50 mS/mm, respectively. In contrast, the AlGaN backbarrier exhibits lower maxima, with <InlineEquation ID="IEq3"> <EquationSource Format="TEX">\({{I}_{{\text{D}}}}\)</EquationSource> <!--PhysSoSt2560381Gowtham-m3--> </InlineEquation> of 0.60 A/mm and <InlineEquation ID="IEq4"> <EquationSource Format="TEX">\({{g}_{m}}\)</EquationSource> <!--PhysSoSt2560381Gowtham-m4--> </InlineEquation> near 0.40 mS/mm. The InGaN-structured device also surpasses AlGaN in RF performance, achieving a maximum unity current gain cutoff frequency (<InlineEquation ID="IEq5"> <EquationSource Format="TEX">\({{f}_{T}}\)</EquationSource> <!--PhysSoSt2560381Gowtham-m5--> </InlineEquation>) of about 75 GHz, versus 61 GHz for AlGaN. This heightened <InlineEquation ID="IEq6"> <EquationSource Format="TEX">\({{f}_{T}}\)</EquationSource> <!--PhysSoSt2560381Gowtham-m6--> </InlineEquation> stems from improved channel carrier transport and reduced gate-drain capacitance (<InlineEquation ID="IEq7"> <EquationSource Format="TEX">\({{C}_{{{\text{GD}}}}}\)</EquationSource> <!--PhysSoSt2560381Gowtham-m7--> </InlineEquation>), with InGaN backbarrier showing a lower <InlineEquation ID="IEq8"> <EquationSource Format="TEX">\({{C}_{{{\text{GD}}}}}\)</EquationSource> <!--PhysSoSt2560381Gowtham-m8--> </InlineEquation> (0.8 × 10<sup>–13</sup> F/mm) compared to AlGaN (1.3 × 10<sup>–13</sup> F/mm) in the high-bias regime, which is critical for fast switching and minimizing power losses. The InGaN back barrier HEMT demonstrates a higher gate-source capacitance (<InlineEquation ID="IEq9"> <EquationSource Format="TEX">\({{C}_{{{\text{GS}}}}}\)</EquationSource> <!--PhysSoSt2560381Gowtham-m9--> </InlineEquation>) of about 1.0 × 10<sup>‒12</sup>&#xa0;F/mm, which enables enhanced transconductance for efficient gate control. The InGaN back barrier HEMT sustains a substantial breakdown voltage of 436 V, underscoring its potential for high-power and high-frequency electronic applications, while the AlGaN back barrier offers an even higher breakdown of 543 V.</p>

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Comparative Design of p-GaN Gate Al0.23Ga0.77N/GaN HEMTs with Al0.05Ga0.95 and In0.1Ga0.9N Back Barriers for RF Power Applications

  • 期刊论文

  • 发表日期：

    2026年3月13日

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  • P. Gowtham,
  • G. Vetrichelvi,
  • K. Balaji,
  • S. Karthikeyan

摘要

Abstract

This study systematically investigates the static and dynamic behaviors of p-GaN-gate high electron mobility transistors (HEMTs) incorporating two distinct back barrier compositions: the conventional Al0.05Ga0.95N and a In0.1Ga0.9N layer. Both devices are designed with identical geometries, featuring a gate length of 1.2 μm. The InGaN back barrier HEMT consistently delivers superior output current ( \({{I}_{{\text{D}}}}\) ) and transconductance ( \({{g}_{m}}\) ) compared to its AlGaN counterpart, reaching peak values of approximately 0.82 A/mm and 0.50 mS/mm, respectively. In contrast, the AlGaN backbarrier exhibits lower maxima, with \({{I}_{{\text{D}}}}\) of 0.60 A/mm and \({{g}_{m}}\) near 0.40 mS/mm. The InGaN-structured device also surpasses AlGaN in RF performance, achieving a maximum unity current gain cutoff frequency ( \({{f}_{T}}\) ) of about 75 GHz, versus 61 GHz for AlGaN. This heightened \({{f}_{T}}\) stems from improved channel carrier transport and reduced gate-drain capacitance ( \({{C}_{{{\text{GD}}}}}\) ), with InGaN backbarrier showing a lower \({{C}_{{{\text{GD}}}}}\) (0.8 × 10–13 F/mm) compared to AlGaN (1.3 × 10–13 F/mm) in the high-bias regime, which is critical for fast switching and minimizing power losses. The InGaN back barrier HEMT demonstrates a higher gate-source capacitance ( \({{C}_{{{\text{GS}}}}}\) ) of about 1.0 × 10‒12 F/mm, which enables enhanced transconductance for efficient gate control. The InGaN back barrier HEMT sustains a substantial breakdown voltage of 436 V, underscoring its potential for high-power and high-frequency electronic applications, while the AlGaN back barrier offers an even higher breakdown of 543 V.