Scholarlink

Abstract <p>This study investigates the temperature-dependent behavior of the step-channel dual-metal double-gate tunnel field-effect transistor (SCP-DG-TFET) incorporating an InGaSb pocket, within the range of 250 to 450 K, highlighting its thermal reliability and operational robustness. The InGaSb pocket, characterized by a low bandgap and minimal lattice mismatch with GaSb, significantly enhances carrier injection efficiency and strengthens electrostatic control within the device. The SCP-DG-TFET exhibits remarkable switching characteristics, achieving a high <i>I</i><sub>on</sub>/<i>I</i><sub>off</sub> ratio of 2.65 × 10<sup>13</sup>, alongside an improved subthreshold swing (SS) of 25.94 mV/dec, indicating efficient suppression of leakage currents. The device achieves a transconductance (<i>g</i><sub>m</sub>) of 4.98 mS, which aids in maintaining a stable threshold voltage (<i>V</i><sub>th</sub>) of 0.384 V. Furthermore, it delivers an ON-state current (<i>I</i><sub>on</sub>) of 1.10 mA/µm and an OFF-state leakage current (<i>I</i><sub>off</sub>) of 5.83&#xa0;× 10<sup>−17</sup> A/µm. These findings highlight the device’s capability for efficient switching, making it a promising candidate for future low-power and high-frequency electronic applications.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Enhanced Performance and Reliability of Non-Uniform Channel Double-Gate Tunnel Field Effect Transistor with InGaSb Pocket Modulation

  • 期刊论文

  • 发表日期：

    2025年10月3日

查看全文
  • Rajeev Kumar Sachan,
  • Vedvrat,
  • Shrish Bajpai

摘要

Abstract

This study investigates the temperature-dependent behavior of the step-channel dual-metal double-gate tunnel field-effect transistor (SCP-DG-TFET) incorporating an InGaSb pocket, within the range of 250 to 450 K, highlighting its thermal reliability and operational robustness. The InGaSb pocket, characterized by a low bandgap and minimal lattice mismatch with GaSb, significantly enhances carrier injection efficiency and strengthens electrostatic control within the device. The SCP-DG-TFET exhibits remarkable switching characteristics, achieving a high Ion/Ioff ratio of 2.65 × 1013, alongside an improved subthreshold swing (SS) of 25.94 mV/dec, indicating efficient suppression of leakage currents. The device achieves a transconductance (gm) of 4.98 mS, which aids in maintaining a stable threshold voltage (Vth) of 0.384 V. Furthermore, it delivers an ON-state current (Ion) of 1.10 mA/µm and an OFF-state leakage current (Ioff) of 5.83 × 10−17 A/µm. These findings highlight the device’s capability for efficient switching, making it a promising candidate for future low-power and high-frequency electronic applications.