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Abstract <p>Polycrystalline silicon (p-Si) is highly valued for its cost-effectiveness, abundant availability, favourable optoelectronic properties, and mechanical stability. This paper presents an in-depth study of the formation and characteristics of polycrystalline silicon (p-Si) layered with zinc oxide (ZnO) via the thermal evaporation route at varying annealed temperatures (200, 300, 400, and 500°C). The study reveals significant findings on how temperature variations during the thermal evaporation process influence the structural, optical, and electrical properties of the p-Si/ZnO layered structure. The scanning electron microstructure (SEM) and X-ray diffraction analysis reveal a better-defined structure, and their peaks conform to their doping level. The findings suggest that higher deposition temperatures enhance structural, electrical, and optical properties. With the influences of high processing temperature, the doped p-Si/ZnO layer showed improved transmittance (60%), better optical band gap (1.67 eV), and quantum (energy) efficiency of 85%. An optimum behaviour of the p-Si/ZnO layer processed at 500°C is recommended for solar cell applications.</p>

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Effect of Processing Temperature and Zinc Oxide Layer on Optoelectronic and Energy Efficiency Properties of Polycrystalline Silicon Thin Film

  • 期刊论文

  • 发表日期：

    2026年5月20日

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  • M. Aruna,
  • N. Nagabhooshanam,
  • Pragati Gajbhiye,
  • Shivakrishna Dasi,
  • B. Angel,
  • L. Divakara Rao,
  • Ramya Maranan,
  • T. Thirugnanasambandham,
  • S. Sathiyamurthy

摘要

Abstract

Polycrystalline silicon (p-Si) is highly valued for its cost-effectiveness, abundant availability, favourable optoelectronic properties, and mechanical stability. This paper presents an in-depth study of the formation and characteristics of polycrystalline silicon (p-Si) layered with zinc oxide (ZnO) via the thermal evaporation route at varying annealed temperatures (200, 300, 400, and 500°C). The study reveals significant findings on how temperature variations during the thermal evaporation process influence the structural, optical, and electrical properties of the p-Si/ZnO layered structure. The scanning electron microstructure (SEM) and X-ray diffraction analysis reveal a better-defined structure, and their peaks conform to their doping level. The findings suggest that higher deposition temperatures enhance structural, electrical, and optical properties. With the influences of high processing temperature, the doped p-Si/ZnO layer showed improved transmittance (60%), better optical band gap (1.67 eV), and quantum (energy) efficiency of 85%. An optimum behaviour of the p-Si/ZnO layer processed at 500°C is recommended for solar cell applications.