Scholarlink

Abstract <p>GaN/AlGaN multiple quantum well light-emitting diodes (MQW-LEDs) are high-performance electroluminescent sources with broad applications in solid-state lighting, medical diagnostics, and industrial processing. This study systematically investigates the ultraviolet (UV) emission mechanisms and wavelength-tuning strategies of GaN/AlGaN MQWs through Technology Computer-Aided Design (TCAD) simulations. Unlike conventional GaN heterojunction LEDs, the emission characteristics of the MQW-LEDs are governed by quantum confinement effects (QCE) and polarization field engineering. By optimizing structural parameters, we achieve tunable UV emission across 335–366 nm, with optimized electroluminescence (EL) centered at 342.6–348.7 nm. Deconvolution analysis of EL spectra reveals that the emission blue shift originates from enhanced QCE due to reduced well thickness-an effect that not only increases carrier wavefunction overlap and radiative recombination efficiency by also suppress non-radiative recombination losses by minimizing lattice relaxation and interfacial strain accumulation. These findings establish critical design guidelines for bandgap engineering in nitride-based MQWs and provide theoretical foundations for developing high-efficiency UV LEDs.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

TCAD Optimized GaN/AlGaN MQWs for Tunable UV LED Emission

  • 期刊论文

  • 发表日期：

    2025年9月16日

查看全文
  • Chenxing Jiang,
  • Yifan Yang,
  • Yaqi Han,
  • Xin Tang,
  • Fenghao Xing,
  • Feng Chen,
  • Yunjun Rui,
  • Zhiyuan Yao,
  • Chen Chen,
  • Dawei Gu,
  • Lei Wang

摘要

Abstract

GaN/AlGaN multiple quantum well light-emitting diodes (MQW-LEDs) are high-performance electroluminescent sources with broad applications in solid-state lighting, medical diagnostics, and industrial processing. This study systematically investigates the ultraviolet (UV) emission mechanisms and wavelength-tuning strategies of GaN/AlGaN MQWs through Technology Computer-Aided Design (TCAD) simulations. Unlike conventional GaN heterojunction LEDs, the emission characteristics of the MQW-LEDs are governed by quantum confinement effects (QCE) and polarization field engineering. By optimizing structural parameters, we achieve tunable UV emission across 335–366 nm, with optimized electroluminescence (EL) centered at 342.6–348.7 nm. Deconvolution analysis of EL spectra reveals that the emission blue shift originates from enhanced QCE due to reduced well thickness-an effect that not only increases carrier wavefunction overlap and radiative recombination efficiency by also suppress non-radiative recombination losses by minimizing lattice relaxation and interfacial strain accumulation. These findings establish critical design guidelines for bandgap engineering in nitride-based MQWs and provide theoretical foundations for developing high-efficiency UV LEDs.