Scholarlink

Abstract <p>This study presents investigation of the photoluminescence (PL) properties of ZnIn<sub>2</sub>S<sub>4</sub> single crystals. The PL emission characteristics were performed across a temperature spectrum spanning from 5 to 300&#xa0;K. The PL emission maxima were observed in the infrared region at a wavelength of 725 nm (1.71 eV). At lower temperatures, this peak undergoes a blue shift, moving towards higher energies. At 5 K, the peak shifted by 40 nm, being observed at 685 nm (1.81 eV). At ambient temperature, the photoluminescence excitation (PLE) analysis of ZnIn<sub>2</sub>S<sub>4</sub> revealed distinct spectral maxima at 2.75 eV (450 nm) and 2.33 eV (530 nm), corresponding to electronic transitions from the valence band to the conduction band, and from defect states to the conduction band, respectively.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Near-Infrared Photoluminescence from ZnIn2S4 Layered Single Crystals

  • 期刊论文

  • 发表日期：

    2025年6月18日

查看全文
  • S. G. Asadullayeva,
  • Z. A. Jahangirli,
  • M. A. Musayev,
  • Q. Y. Eyyubov,
  • A. S. Abiyev

摘要

Abstract

This study presents investigation of the photoluminescence (PL) properties of ZnIn2S4 single crystals. The PL emission characteristics were performed across a temperature spectrum spanning from 5 to 300 K. The PL emission maxima were observed in the infrared region at a wavelength of 725 nm (1.71 eV). At lower temperatures, this peak undergoes a blue shift, moving towards higher energies. At 5 K, the peak shifted by 40 nm, being observed at 685 nm (1.81 eV). At ambient temperature, the photoluminescence excitation (PLE) analysis of ZnIn2S4 revealed distinct spectral maxima at 2.75 eV (450 nm) and 2.33 eV (530 nm), corresponding to electronic transitions from the valence band to the conduction band, and from defect states to the conduction band, respectively.