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Abstract <p>Antimony (Sb: 2 to 10 wt %) doped SnO<sub>2</sub> thin films were synthesized by sol–gel spin coating process. X-ray diffraction (XRD) analysis of Sb-doped SnO<sub>2</sub> films exhibits polycrystalline tetragonal structure with orientation along (1 1 0). The crystallite size of Sb-doped SnO<sub>2</sub> films decreased from 32 to 14 nm with increased Sb dopant in SnO<sub>2</sub>. The micro-structural parameters micro-strain, dislocation density, stress, and strain energy density values are affected by Sb dopant in SnO<sub>2</sub>. The morphology of the films shows spherical-shaped particles composed of an aggregation of small-size crystallites. The surface roughness parameters of Sb-doped SnO<sub>2</sub> thin films were analyzed using atomic force microscopy. X-ray photoelectron spectroscopy studies confirm the presence of Sn<sup>4+</sup> and low-valence states of Sb<sup>3+</sup>. The optical band gap of Sb-doped SnO<sub>2</sub> thin films varied from 3.57 to 4.16 eV with an increment of the doping concentration of Sb in SnO<sub>2</sub>.</p>

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Micro-Structural, Surface Morphological, and Optical Properties of Sol–Gel Spin Coated Sb-Doped SnO2 Thin Films

  • 期刊论文

  • 发表日期：

    2025年1月1日

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  • D. Subramanyam,
  • B. Rajesh Kumar,
  • K. Chandrasekhar Reddy

摘要

Abstract

Antimony (Sb: 2 to 10 wt %) doped SnO2 thin films were synthesized by sol–gel spin coating process. X-ray diffraction (XRD) analysis of Sb-doped SnO2 films exhibits polycrystalline tetragonal structure with orientation along (1 1 0). The crystallite size of Sb-doped SnO2 films decreased from 32 to 14 nm with increased Sb dopant in SnO2. The micro-structural parameters micro-strain, dislocation density, stress, and strain energy density values are affected by Sb dopant in SnO2. The morphology of the films shows spherical-shaped particles composed of an aggregation of small-size crystallites. The surface roughness parameters of Sb-doped SnO2 thin films were analyzed using atomic force microscopy. X-ray photoelectron spectroscopy studies confirm the presence of Sn4+ and low-valence states of Sb3+. The optical band gap of Sb-doped SnO2 thin films varied from 3.57 to 4.16 eV with an increment of the doping concentration of Sb in SnO2.