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Abstract <p>This study investigates the DC and RF performance of two device structures, AlGaN/GaN/AlGaN and AlGaN/GaN/β-Ga<sub>2</sub>O<sub>3</sub>, and analyzes the impact of ultra-wide bandgap back barrier(BB) engineering using beta-Gallium Oxide (β-Ga<sub>2</sub>O<sub>3</sub>) with an energy bandgap of 4.9 eV on the RF characteristics of high-electron-mobility transistors (HEMTs) on Silicon Carbide (SiC) substrate. Compared to AlGaN/GaN/AlGaN, the AlGaN/GaN/β-Ga<sub>2</sub>O<sub>3</sub> structure offers improved electron confinement and reduced buffer leakage, resulting in enhanced output current and higher cutoff frequency for RF applications.The AlGaN/GaN/AlGaN device delivers a drain current of 4.4506 A/mm, a transconductance of 1.09&#xa0;S/mm, a cut-off frequency of 198 GHz, and a breakdown voltage of 45 V. In comparison, the AlGaN/GaN/β-Ga<sub>2</sub>O<sub>3</sub> device achieves a higher drain current of 5.39072 A/mm, an improved transconductance of 1.22 S/mm, an increased cut-off frequency of 228 GHz, and a significantly enhanced breakdown voltage of 84 V. The β-Ga<sub>2</sub>O<sub>3</sub>-based HEMT delivers a significant performance improvement of over 20% compared to the AlGaN-based HEMT. These results highlight the superior electrical performance of the AlGaN/GaN/β-Ga<sub>2</sub>O<sub>3</sub> structure over the conventional AlGaN/GaN/AlGaN design. The enhanced performance originates from the deeper quantum well and higher conduction band offset provided by the β-Ga<sub>2</sub>O<sub>3</sub> back barrier, which significantly improves electron confinement and reduces buffer-related scattering.</p>

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Performance Comparison of AlGaN/GaN HEMTs with Al0.05Ga0.95N and β-Ga2O3 Back Barriers on SiC Substrate for RF Applications

  • 期刊论文

  • 发表日期：

    2026年1月1日

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  • Bathlin Nelmin Nelson,
  • R. S. Shaji

摘要

Abstract

This study investigates the DC and RF performance of two device structures, AlGaN/GaN/AlGaN and AlGaN/GaN/β-Ga2O3, and analyzes the impact of ultra-wide bandgap back barrier(BB) engineering using beta-Gallium Oxide (β-Ga2O3) with an energy bandgap of 4.9 eV on the RF characteristics of high-electron-mobility transistors (HEMTs) on Silicon Carbide (SiC) substrate. Compared to AlGaN/GaN/AlGaN, the AlGaN/GaN/β-Ga2O3 structure offers improved electron confinement and reduced buffer leakage, resulting in enhanced output current and higher cutoff frequency for RF applications.The AlGaN/GaN/AlGaN device delivers a drain current of 4.4506 A/mm, a transconductance of 1.09 S/mm, a cut-off frequency of 198 GHz, and a breakdown voltage of 45 V. In comparison, the AlGaN/GaN/β-Ga2O3 device achieves a higher drain current of 5.39072 A/mm, an improved transconductance of 1.22 S/mm, an increased cut-off frequency of 228 GHz, and a significantly enhanced breakdown voltage of 84 V. The β-Ga2O3-based HEMT delivers a significant performance improvement of over 20% compared to the AlGaN-based HEMT. These results highlight the superior electrical performance of the AlGaN/GaN/β-Ga2O3 structure over the conventional AlGaN/GaN/AlGaN design. The enhanced performance originates from the deeper quantum well and higher conduction band offset provided by the β-Ga2O3 back barrier, which significantly improves electron confinement and reduces buffer-related scattering.