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Abstract <p>This work demonstrates the profound impact of back-barrier composition on the performance of&#xa0;GaN high-electron-mobility transistors (HEMTs) on a β-Ga<sub>2</sub>O<sub>3</sub> substrates. Through a comparative study of two device architectures, we reveal a fundamental design trade-off between high-frequency gain and breakdown robustness. The first employs a conventional compositionally-graded AlGaN back barrier, while the second introduces a novel compositionally-graded InGaN back barrier. Extensive characterization shows that the larger conduction band offset provided by the InGaN layers in the suggested structure enables superior vertical carrier confinement. This results in a 15.5% higher maximum drain current (5.58 vs. 4.83 A/mm), an 11% higher peak transconductance (2.12 vs. 1.91 mS/mm), a 13% lower on-resistance (0.27 vs. 0.31 Ω &#xa0;mm) and a significantly reduced gate-drain capacitance (250 vs. 380 fF/mm). The device with the graded-InGaN back barrier achieves a markedly higher cutoff frequency of 199 GHz, compared to 169 GHz for the conventional architecture. These results provide critical design guidelines, positioning the graded-InGaN back barrier as the premier choice for high-gain RF amplification and the graded-AlGaN barrier for high-voltage power application.</p>

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Performance Comparison of GaN-based HEMTs on β-Ga2O3 Substrates Using Compositionally-Graded InGaN and AlGaN Back Barriers for High Frequency Applications

  • 期刊论文

  • 发表日期：

    2026年1月1日

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  • K. Ferents Koni Jiavana,
  • J. K. Kasthuri Bha,
  • P. Murugapandiyan,
  • Ramkumar Natarajan

摘要

Abstract

This work demonstrates the profound impact of back-barrier composition on the performance of GaN high-electron-mobility transistors (HEMTs) on a β-Ga2O3 substrates. Through a comparative study of two device architectures, we reveal a fundamental design trade-off between high-frequency gain and breakdown robustness. The first employs a conventional compositionally-graded AlGaN back barrier, while the second introduces a novel compositionally-graded InGaN back barrier. Extensive characterization shows that the larger conduction band offset provided by the InGaN layers in the suggested structure enables superior vertical carrier confinement. This results in a 15.5% higher maximum drain current (5.58 vs. 4.83 A/mm), an 11% higher peak transconductance (2.12 vs. 1.91 mS/mm), a 13% lower on-resistance (0.27 vs. 0.31 Ω  mm) and a significantly reduced gate-drain capacitance (250 vs. 380 fF/mm). The device with the graded-InGaN back barrier achieves a markedly higher cutoff frequency of 199 GHz, compared to 169 GHz for the conventional architecture. These results provide critical design guidelines, positioning the graded-InGaN back barrier as the premier choice for high-gain RF amplification and the graded-AlGaN barrier for high-voltage power application.