Abstract <p>The proposed study introduces an advanced silicon carbide (SiC) shielded trench-type insulated gate bipolar transistor with a segmented buffer layer structure (SSTG-IGBT-SB), designed to address the growing demand for efficient power electronic devices in clean energy applications. The novel structure incorporates two distinct doping profiles in the buffer layer, high and moderate, to facilitate the path for maximum current density while maintaining minimal degradation of the on-state voltage (<i>V</i>_on) and breakdown voltage (BV). The results show a 16.40% reduction in on-state specific resistance (<i>R</i>_on,sp) compared to the traditional SSTG-IGBT, without compromising the breakdown voltage of approximately 15 kV. This improved balance between key parameters – breakdown voltage, on-state specific resistance, and on-state voltage – positions the SSTG-IGBT-SB as a reliable and efficient solution for high-power applications, including clean energy systems. This innovation aligns with the global shift towards sustainable energy, supporting the transition to clean and affordable energy sources. The enhanced performance of the SSTG-IGBT-SB ensures better handling of high current flows, contributing to the objectives of improving energy access, infrastructure, and technology in the power sector.</p>