Abstract
We propose a 7 nm high-k gate stack triple material gate (TMG) nanosheet field effect transistor (NSFET) and compare its DC characteristics with a single material gate (SMG) NSFET. The transfer characteristics ( \({{I}_{{\text{D}}}}\) – \({{V}_{{{\text{GS}}}}}\) ), output characteristics ( \({{I}_{{\text{D}}}}\) – \({{V}_{{{\text{DS}}}}}\) ), drain-induced barrier lowering ( \({\text{DIBL}}\) ), subthreshold swing ( \(SS\) ), ON current (ION) to OFF current (IOFF) ratio (ION/IOFF) are estimated, compared and analyzed. ION/IOFF of 108 and 104, DIBL of 22.22 and 44.44 mV/V, and \(SS\) of 80 mV/dec and 90 mV/dec are obtained for TMG and SMG NSFET respectively. We also analyzed RF performance characteristics of SMG and TMG NSFETs like transconductance ( \({{g}_{m}}\) ), output conductance ( \({{g}_{d}}\) ), transconductance generation factor ( \({\text{TGF}}\) ), and early voltage (VEA). Additionally, we have examined SMG and TMG NSFET Parasitic capacitance ( \({{C}_{{gg}}}\) ), cut-off frequency ( \({{f}_{{\text{T}}}}\) ), dynamic power, and average power. These values suggest that the TMG NSFET device has improved DIBL, SS, and ION/IOFF switching, less leakage current, improved capacitance and frequency characteristics compared to SMG NSFET, suitable for improved Power, Performance and Area (PPA).
