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Abstract <p>With the ongoing reduction in manufacturing costs, minimal mass, and substantial adaptability, ultra-thin thermophotovoltaic (TPV) cells are garnering increasing scholarly interest. Nevertheless, ultra-thin TPV cells are impeded by the limitation of their absorption capabilities when juxtaposed with traditional bulk cell alternatives. Consequently, the enhancement of absorption in ultra-thin TPV cells is of paramount importance and constitutes the principal objective of this investigation. This study elucidates a hemispherical-coupled light-trapping mechanism that incorporates an ultra-thin film of gallium antimonide (GaSb) situated between an upper two-dimensional (2D) hemispherical metallic lattice and a lower metallic layer. The absorption spectra for the proposed configuration have consequently been calculated employing the finite-difference time-domain (FDTD) method. The proposed design achieved a notable conversion efficiency of 45.32% under black-body radiation at a temperature of <i>T</i> = 2023 K. Moreover, the short-circuit current density and open-circuit voltage parameters for the cell are significantly enhanced due to the plasmonic absorption augmentation provided by the suggested light-trapping architecture. These findings are expected to advance the evolution of innovative, cost-effective methodologies for the production of high-efficiency ultra-thin TPV solar cells.</p>

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FDTD Modelling of Nanostructured Hemispherical Plasmonic Light Trapping for Enhanced Ultra-thin GaSb TPV Cell

  • 期刊论文

  • 发表日期：

    2025年4月24日

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  • Fathi Bendelala,
  • Aissa Bellakhdar,
  • Oussama Baitiche,
  • Ali Cheknane,
  • Mohammed H. S. Helal,
  • Hikmat S. Hilal,
  • Abdelaziz Rabehi

摘要

Abstract

With the ongoing reduction in manufacturing costs, minimal mass, and substantial adaptability, ultra-thin thermophotovoltaic (TPV) cells are garnering increasing scholarly interest. Nevertheless, ultra-thin TPV cells are impeded by the limitation of their absorption capabilities when juxtaposed with traditional bulk cell alternatives. Consequently, the enhancement of absorption in ultra-thin TPV cells is of paramount importance and constitutes the principal objective of this investigation. This study elucidates a hemispherical-coupled light-trapping mechanism that incorporates an ultra-thin film of gallium antimonide (GaSb) situated between an upper two-dimensional (2D) hemispherical metallic lattice and a lower metallic layer. The absorption spectra for the proposed configuration have consequently been calculated employing the finite-difference time-domain (FDTD) method. The proposed design achieved a notable conversion efficiency of 45.32% under black-body radiation at a temperature of T = 2023 K. Moreover, the short-circuit current density and open-circuit voltage parameters for the cell are significantly enhanced due to the plasmonic absorption augmentation provided by the suggested light-trapping architecture. These findings are expected to advance the evolution of innovative, cost-effective methodologies for the production of high-efficiency ultra-thin TPV solar cells.