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Abstract <p>Taking advantage of the feature that the outgoing light direction of a vertical cavity surface emitting semiconductor laser is perpendicular to the substrate surface, a novel surface emitting semiconductor laser structure featuring a gold blocking pattern layer was devised. This design effectively suppressed certain mode central wavelength peaks within the central region, preventing their normal excitation and enabling direct production of hollow beam output. Vertical cavity surface emitting semiconductor lasers with a new structure of different sizes were fabricated. The far-field images were captured using a CCD camera, and the light intensity curves were subsequently analyzed. The results indicate that devices of four different sizes with different mesa diameters and blocking layer diameters are capable of producing hollow light output at room temperature, and the far field pattern displays a distinct hollow circular spot. Choosing the appropriate ratio of mesa size to blocking layer size can achieve better hollow effect and greater power. The output characteristics of the device with a mesa diameter of &#xa0;400 μm and a blocking layer diameter of 100 μm is tested. The&#xa0;laser wavelength of the device is 848 nm, and the peak output power is 368 mW under the current drive of 1.9&#xa0;A. The output characteristics of hollow beam are presented at full working current. This structure has a simple preparation process, no cavity surface damage, and is easy to form two-dimensional arrays. It has significant application prospects in many fields such as optical micro manipulation and optical measurement.</p>

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VCSELs with Gold Blocking Pattern Layer and Their Hollow Beam Output Characteristics

  • 期刊论文

  • 发表日期：

    2025年2月1日

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  • Chao Pang,
  • Changling Yan,
  • Jinghang Yang

摘要

Abstract

Taking advantage of the feature that the outgoing light direction of a vertical cavity surface emitting semiconductor laser is perpendicular to the substrate surface, a novel surface emitting semiconductor laser structure featuring a gold blocking pattern layer was devised. This design effectively suppressed certain mode central wavelength peaks within the central region, preventing their normal excitation and enabling direct production of hollow beam output. Vertical cavity surface emitting semiconductor lasers with a new structure of different sizes were fabricated. The far-field images were captured using a CCD camera, and the light intensity curves were subsequently analyzed. The results indicate that devices of four different sizes with different mesa diameters and blocking layer diameters are capable of producing hollow light output at room temperature, and the far field pattern displays a distinct hollow circular spot. Choosing the appropriate ratio of mesa size to blocking layer size can achieve better hollow effect and greater power. The output characteristics of the device with a mesa diameter of  400 μm and a blocking layer diameter of 100 μm is tested. The laser wavelength of the device is 848 nm, and the peak output power is 368 mW under the current drive of 1.9 A. The output characteristics of hollow beam are presented at full working current. This structure has a simple preparation process, no cavity surface damage, and is easy to form two-dimensional arrays. It has significant application prospects in many fields such as optical micro manipulation and optical measurement.