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Abstract <p>In this paper, a normally-OFF delta (δ)-doped aluminium gallium nitride (AlGaN)/Gallium nitride (GaN) high electron mobility transistor (HEMT) for high power applications is designed and simulated in Silvaco TCAD. Normally-OFF operation is achieved by using <i>p</i>-GaN cap layers where SiN<sub><i>x</i></sub> is the dielectric which is placed between the gate electrode and <i>p</i>-GaN layer. Due to the delta (δ) doping, very low off current is achieved in the order of 10<sup>–17</sup> A and <i>I</i><sub>ON</sub>/<i>I</i><sub>OFF</sub> ratio in the order of 10<sup>12</sup>, which is significant enough for high power switching applications. By the use of SiN<sub>x</sub> dielectric layer, a decent threshold voltage of 2.16 V is observed. The proposed device is optimized by using various gate lengths and gate work functions.</p>

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Performance Enhancement of Normally-OFF AlGaN/GaN HEMT using Delta-doped GaN cap Layer

  • 期刊论文

  • 发表日期：

    2025年4月24日

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  • Ashish Raman,
  • K Sumanth Krishna,
  • Ravi Ranjan,
  • Sarabdeep Singh

摘要

Abstract

In this paper, a normally-OFF delta (δ)-doped aluminium gallium nitride (AlGaN)/Gallium nitride (GaN) high electron mobility transistor (HEMT) for high power applications is designed and simulated in Silvaco TCAD. Normally-OFF operation is achieved by using p-GaN cap layers where SiNx is the dielectric which is placed between the gate electrode and p-GaN layer. Due to the delta (δ) doping, very low off current is achieved in the order of 10–17 A and ION/IOFF ratio in the order of 1012, which is significant enough for high power switching applications. By the use of SiNx dielectric layer, a decent threshold voltage of 2.16 V is observed. The proposed device is optimized by using various gate lengths and gate work functions.