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Abstract <p>Metallurgical silicon has been refined in electron-beam plasma of water vapor. This method is based on converting hard-to-evaporate impurities into their volatile compounds in chemically active oxidative electron-beam plasma. Major metal impurities are removed during electron-beam refining of silicon in water vapor plasma at a sample temperature of 1430°C.</p>

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Purification of Metallurgical Silicon from Metal Impurities in Electron-Beam Plasma of Water Vapor

  • 期刊论文

  • 发表日期：

    2025年7月1日

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  • V. O. Konstantinov,
  • V. G. Shchukin

摘要

Abstract

Metallurgical silicon has been refined in electron-beam plasma of water vapor. This method is based on converting hard-to-evaporate impurities into their volatile compounds in chemically active oxidative electron-beam plasma. Major metal impurities are removed during electron-beam refining of silicon in water vapor plasma at a sample temperature of 1430°C.