Abstract <p>The effect of impurity cations on the optical and electrophysical properties of La<sub>3</sub>Ga<sub>5</sub>SiO<sub>14</sub> crystals (sp. gr. <i>P</i>321), inactive and activated by Cr and Mn ions (1000 ppm), is shown. The optical properties of these crystals indicate different mechanisms of point defect formation, which leads to difference in their electrophysical properties. For the La<sub>3</sub>Ga<sub>5</sub>SiO<sub>14</sub>&#xa0;:&#xa0;Cr crystal, the dc electrical conductivity in the directions parallel (σ<sub>||<i>c</i></sub>) and perpendicular (σ<sub>⊥<i>c</i></sub>) to the optical axis in the temperature range of 673–825 K and the static permittivity (ε<sub>||<i>c</i></sub> and ε<sub>⊥<i>c</i></sub>) at 297 K were measured by impedance spectroscopy. The data obtained are compared with the results of previously published measurements for La<sub>3</sub>Ga<sub>5</sub>SiO<sub>14</sub>&#xa0;:&#xa0;Mn.</p>

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Anisotropy of Electrophysical Properties of La3Ga5SiO14 Langasite Crystals Doped with Cr and Mn Ions

  • N. I. Sorokin,
  • T. G. Golovina,
  • A. F. Konstantinova

摘要

Abstract

The effect of impurity cations on the optical and electrophysical properties of La3Ga5SiO14 crystals (sp. gr. P321), inactive and activated by Cr and Mn ions (1000 ppm), is shown. The optical properties of these crystals indicate different mechanisms of point defect formation, which leads to difference in their electrophysical properties. For the La3Ga5SiO14 : Cr crystal, the dc electrical conductivity in the directions parallel (σ||c) and perpendicular (σc) to the optical axis in the temperature range of 673–825 K and the static permittivity (ε||c and εc) at 297 K were measured by impedance spectroscopy. The data obtained are compared with the results of previously published measurements for La3Ga5SiO14 : Mn.