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Abstract <p>The crystal structures of the epitaxial multilayer films {In<sub>0.1</sub>Ga<sub>0.9</sub>As/GaAs}&#xa0;×&#xa0;10 and {In<sub>0.2</sub>Ga<sub>0.8</sub>As/GaAs}&#xa0;×&#xa0;10 grown on GaAs substrates with different orientations, (100), (110), and (111)<i>А</i>, were studied in order to elucidate specific features, which can be related to the previously found efficiency of the terahertz emission generation in films with (110) and (111)<i>А</i> orientations. Significant concentrations of twins and stacking faults were found on non-standard GaAs (110) and (111)<i>А</i> substrates. The composition and thickness of individual layers of heterostructures on GaAs (100) substrates were refined based on the analysis of interference oscillations in X-ray diffraction curves.</p>

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Crystal Structure Analysis of Epitaxial Nanoheterostructures with Multiple Pseudomorphic Quantum Wells {InхGa\(_{{{\mathbf{1}}-x}}\)As/GaAs} on GaAs (100), (110), and (111)А Substrates

  • 期刊论文

  • 发表日期：

    2025年2月1日

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  • E. A. Klimov,
  • A. N. Klochkov,
  • S. S. Pushkarev

摘要

Abstract

The crystal structures of the epitaxial multilayer films {In0.1Ga0.9As/GaAs} × 10 and {In0.2Ga0.8As/GaAs} × 10 grown on GaAs substrates with different orientations, (100), (110), and (111)А, were studied in order to elucidate specific features, which can be related to the previously found efficiency of the terahertz emission generation in films with (110) and (111)А orientations. Significant concentrations of twins and stacking faults were found on non-standard GaAs (110) and (111)А substrates. The composition and thickness of individual layers of heterostructures on GaAs (100) substrates were refined based on the analysis of interference oscillations in X-ray diffraction curves.