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Abstract <p>Irradiation of surfaces with low-energy ions is an integral part of a number of technological operations in microelectronics. This paper proposes a model that can explain the change in the surface diffusion coefficient of Ge, adsorbed on Si(111), with increasing temperature under the influence of a low-energy ion flow of noble gases.</p>

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Ion-Stimulated Surface Diffusion

  • 期刊论文

  • 发表日期：

    2026年2月1日

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  • A. V. Fadeev,
  • Yu. N. Devyatko

摘要

Abstract

Irradiation of surfaces with low-energy ions is an integral part of a number of technological operations in microelectronics. This paper proposes a model that can explain the change in the surface diffusion coefficient of Ge, adsorbed on Si(111), with increasing temperature under the influence of a low-energy ion flow of noble gases.