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Abstract <p>Heterostructures with AlGaN/GaN on silicon substrates with orientation 111 were created using ammonia molecular beam epitaxy. SLS designs were investigated and metal-rich modes were tested during the creation of Al<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>N. The heterostructures were designed with a transition from silicon to AlN and to GaN through a superlattice. The metal-rich growth mode was used to create Al<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>N. The growth was performed on an NH3-MBE installation at the “Nanofab-100” NTC, then the heterostructures were studied using RAMAN spectroscopy and atomic force microscopy. The types of stresses of the GaN layers (tensile/compressive) were determined by the shift of peaks in the spectra. The surface morphology of the films, their roughness was determined using AFM. Less rough films were obtained after optimizing the SLS design. The stresses in the GaN layers were also reduced with the introduction of an AlGaN layer grown in the metal-rich mode.</p>

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Growth of AlGaN/GaN Heterostructures Using Metal-Rich/N-Rich Growth Modes on Silicon Substrates by the Ammonia MBE

  • 期刊论文

  • 发表日期：

    2025年12月1日

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  • D. Tuzhilin,
  • V. Nepomilueva,
  • K. Tsarik

摘要

Abstract

Heterostructures with AlGaN/GaN on silicon substrates with orientation 111 were created using ammonia molecular beam epitaxy. SLS designs were investigated and metal-rich modes were tested during the creation of AlxGa1–xN. The heterostructures were designed with a transition from silicon to AlN and to GaN through a superlattice. The metal-rich growth mode was used to create AlxGa1–xN. The growth was performed on an NH3-MBE installation at the “Nanofab-100” NTC, then the heterostructures were studied using RAMAN spectroscopy and atomic force microscopy. The types of stresses of the GaN layers (tensile/compressive) were determined by the shift of peaks in the spectra. The surface morphology of the films, their roughness was determined using AFM. Less rough films were obtained after optimizing the SLS design. The stresses in the GaN layers were also reduced with the introduction of an AlGaN layer grown in the metal-rich mode.