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Abstract <p>The results of simulation of a tunnel field-effect transistor with sharp source and drain Schottky Barrier contacts are presented. This allows comparing the transistor parameters (the threshold voltage, the subthreshold slope, the On-state channel conductance) for different designs and materials used. The best parameters were obtained for the thin metal source/drain contact plunged into silicon, high-<i>k</i> gate dielectric, and a short channel.</p>

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Simulation of a Tunnel Field-Effect Transistor with Sharp Source and Drain Schottky Barrier Contacts

  • 期刊论文

  • 发表日期：

    2025年12月1日

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  • I. Semenikhin,
  • D. Svintsov,
  • V. Vyurkov,
  • K. Rudenko,
  • V. Lukichev

摘要

Abstract

The results of simulation of a tunnel field-effect transistor with sharp source and drain Schottky Barrier contacts are presented. This allows comparing the transistor parameters (the threshold voltage, the subthreshold slope, the On-state channel conductance) for different designs and materials used. The best parameters were obtained for the thin metal source/drain contact plunged into silicon, high-k gate dielectric, and a short channel.