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Abstract <p>The comparative analysis of the voltage-ampere characteristics and trap parameters is carried out within the framework of the spatial charge-limited current model in metal-insulator-semiconductor structures ITO/[GeO<sub><i>x</i></sub>]<sub>(<i>z</i>)</sub>[SiO<sub>2</sub>]<sub>(1–<i>z</i>)</sub> (0.25 ≤ <i>z</i> ≤ 1)/Si with germanosilicate films obtained by electron beam evaporation of germanium oxide and silicon oxide powders in vacuum and deposition on <i>n</i><sup>+</sup>-Si and <i>p</i><sup>+</sup>-Si substrates. It has determined that the MIS structures of ITO/[GeO<sub><i>x</i></sub>]<sub>(<i>z</i>)</sub>[SiO<sub>2</sub>]<sub>(1–<i>z</i>)</sub>/Si have a bipolar type of conductivity. The hole type of conductivity dominates in MIS structures with a parameter <i>z</i> &gt; 0.5, and the electronic type of conductivity dominate in structures <i>z</i> ≤ 0.5. It is also determined that the films have at least two types of traps with localized levels energy.</p>

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Charge Transport in MIS Structures ITO/[GeOx](z)[SiO2](1–z)/Si

  • 期刊论文

  • 发表日期：

    2025年12月1日

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  • I. Yushkov,
  • A. Gismatulin,
  • G. Kamaev,
  • M. Vergnat,
  • V. A. Volodin

摘要

Abstract

The comparative analysis of the voltage-ampere characteristics and trap parameters is carried out within the framework of the spatial charge-limited current model in metal-insulator-semiconductor structures ITO/[GeOx](z)[SiO2](1–z) (0.25 ≤ z ≤ 1)/Si with germanosilicate films obtained by electron beam evaporation of germanium oxide and silicon oxide powders in vacuum and deposition on n+-Si and p+-Si substrates. It has determined that the MIS structures of ITO/[GeOx](z)[SiO2](1–z)/Si have a bipolar type of conductivity. The hole type of conductivity dominates in MIS structures with a parameter z > 0.5, and the electronic type of conductivity dominate in structures z ≤ 0.5. It is also determined that the films have at least two types of traps with localized levels energy.