Abstract <p>This work derives an analytical expression for the decoherence measure of a single-qubit ion gate based on a three-level atomic model driven by two laser fields. Under the rotating-wave approximation and large detuning conditions, an effective Raman Hamiltonian is constructed to describe the ion-laser interaction. The resulting decoherence measure captures the influence of effective detuning differences and phase shifts between the driving fields.</p>

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Decoherence Measure of Single-Qubit Ion Gate

  • L. Fedichkin,
  • A. Kuznetsova

摘要

Abstract

This work derives an analytical expression for the decoherence measure of a single-qubit ion gate based on a three-level atomic model driven by two laser fields. Under the rotating-wave approximation and large detuning conditions, an effective Raman Hamiltonian is constructed to describe the ion-laser interaction. The resulting decoherence measure captures the influence of effective detuning differences and phase shifts between the driving fields.