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Abstract <p>The work presents a simulation of the growth of chiral nanostructures using the Monte Carlo method. The influence of technological parameters of the sputtering process, such as the deposition angle of the substrate relative to the source of the sputtered material, rotation speed and temperature of the substrate, on the morphology of the resulting chiral nanostructures is shown.</p>

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Modeling the Growth of Chiral Nanostructures by Glancing Angle Deposition

  • 期刊论文

  • 发表日期：

    2025年12月1日

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  • M. M. Chebokhin,
  • O. S. Trushin

摘要

Abstract

The work presents a simulation of the growth of chiral nanostructures using the Monte Carlo method. The influence of technological parameters of the sputtering process, such as the deposition angle of the substrate relative to the source of the sputtered material, rotation speed and temperature of the substrate, on the morphology of the resulting chiral nanostructures is shown.