Scholarlink

Abstract <p>The properties of Cu/NC/D/Ni memristive structures with thin layers of (CoFe)<sub><i>x</i></sub>(SiO<sub>2</sub>)<sub>100–<i>x</i></sub> nanocomposite (230 nm) and LiNbO<sub>3</sub> dielectric (14–28 nm) are studied. It is shown that annealing the structures at 300°C for 10 min leads to increase in the ratio of the high-resistance state (<i>R</i><sub>off</sub>) to the low-resistance state (<i>R</i><sub>on</sub>). Heat treatment also increases the stability of resistive state. The increase of the LiNbO<sub>3</sub> layer thickness increases in the values of <i>R</i><sub>off</sub>, <i>R</i><sub>on</sub>, and the resistive switching (RS) voltage of the structures to the low-resistance state. The structures exhibit stable multilevel RS in successive cycles of potentiation and depression, which, coupled with plasticity and a high <i>R</i><sub>off</sub>/<i>R</i><sub>on</sub> ratio, demonstrates the prospects of their use as synapses in the development of neuromorphic systems.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Resistive Switching of Memristors Based on (CoFe)x(SiO2)100–x Nanocomposite and LiNbO3 Layers with Ni Electrode

  • 期刊论文

  • 发表日期：

    2025年12月1日

查看全文
  • S. N. Nikolaev,
  • G. S. Nikolaev,
  • A. V. Sitnikov,
  • V. A. Demin,
  • V. V. Rylkov

摘要

Abstract

The properties of Cu/NC/D/Ni memristive structures with thin layers of (CoFe)x(SiO2)100–x nanocomposite (230 nm) and LiNbO3 dielectric (14–28 nm) are studied. It is shown that annealing the structures at 300°C for 10 min leads to increase in the ratio of the high-resistance state (Roff) to the low-resistance state (Ron). Heat treatment also increases the stability of resistive state. The increase of the LiNbO3 layer thickness increases in the values of Roff, Ron, and the resistive switching (RS) voltage of the structures to the low-resistance state. The structures exhibit stable multilevel RS in successive cycles of potentiation and depression, which, coupled with plasticity and a high Roff/Ron ratio, demonstrates the prospects of their use as synapses in the development of neuromorphic systems.