Abstract <p>Open sandwich TiN–SiO₂–Mo structures are fabricated using thin-film technology. The possibility of their anomalous electroforming, occurring even at relatively low voltages and currents, as well as under short (on the order of tens of milliseconds) voltage pulses, similar to the switching pulses (switching to a highly conductive state due to the formation and accumulation of particles of the conducting phase) of such memristors during operation, has been demonstrated. The threshold voltage for the formation of conducting phase particles has been determined experimentally and has been found to be (about 1 V) significantly lower than in similar TiN–SiO₂–W structures (about 3 V). All these features are associated with the presence of molybdenum atoms on the open surface of the edge of the SiO₂ layer, built into it during the fabrication of structures, which is manifested in a high (several orders of magnitude greater than in TiN–SiO₂–W structures) initial conductivity. The use of short voltage pulses can significantly increase the efficiency of the electroforming process both by reducing the time required for its completion and by reducing the likelihood of electrical breakdown of structures.</p>