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Abstract <p>The results of the study of the temperature characteristics of a simple current mirror (CM) on high-voltage SOI nLDMOS transistors with a large drift region with topological norms of 0.5 microns in an extended range of external temperatures are discussed. The characteristics of a simple CM at temperatures of –60, 25, and 125°C are experimentally studied. A mathematical model of a high-voltage SOI nLDMOS transistor with a large DRIFT region for a static mode in the region of high drain voltages and a wide range of ambient temperatures is developed. From the results of the experimental and numerical studies, the temperature range in which the transfer characteristic of the CM remains linear is established. It spans 300°C, from –110 to +190°C in the range of control voltages from 25 to 55 V. In the same temperature range, the current transfer ratio (mirror ratio) depends linearly on the input current level. Based on the data obtained, the conditions for determining the safe operating area (SOA) of a simple CM based on SOI LDMOS transistors are formulated.</p>

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Temperature Characteristics of a Simple Current Mirror Based on a Silicon High-Voltage nLDMOS with a Large Drift Region

  • 期刊论文

  • 发表日期：

    2025年6月1日

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  • A. S. Novoselov,
  • M. R. Gusev,
  • N. V. Masalsky

摘要

Abstract

The results of the study of the temperature characteristics of a simple current mirror (CM) on high-voltage SOI nLDMOS transistors with a large drift region with topological norms of 0.5 microns in an extended range of external temperatures are discussed. The characteristics of a simple CM at temperatures of –60, 25, and 125°C are experimentally studied. A mathematical model of a high-voltage SOI nLDMOS transistor with a large DRIFT region for a static mode in the region of high drain voltages and a wide range of ambient temperatures is developed. From the results of the experimental and numerical studies, the temperature range in which the transfer characteristic of the CM remains linear is established. It spans 300°C, from –110 to +190°C in the range of control voltages from 25 to 55 V. In the same temperature range, the current transfer ratio (mirror ratio) depends linearly on the input current level. Based on the data obtained, the conditions for determining the safe operating area (SOA) of a simple CM based on SOI LDMOS transistors are formulated.