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Abstract <p>In this paper, we demonstrate the double pattening (DP) technique with an anti-spacer, which allows the formation of critical layer structures with sub-193i-lithographic dimensions that go beyond the limits of single extreme ultraviolet lithography (EUV). The set of key parameters affecting the performance of the process is studied and a method for optimizing the lithographic process is presented.</p>

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Study of the Anti-Spacer Double Patterning Method

  • 期刊论文

  • 发表日期：

    2025年2月1日

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  • E. D. Tikhonova,
  • E. S. Gornev

摘要

Abstract

In this paper, we demonstrate the double pattening (DP) technique with an anti-spacer, which allows the formation of critical layer structures with sub-193i-lithographic dimensions that go beyond the limits of single extreme ultraviolet lithography (EUV). The set of key parameters affecting the performance of the process is studied and a method for optimizing the lithographic process is presented.