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Abstract <p>Cu<sub>2</sub>O films are deposited by the method of radio frequency (RF) magnetron sputtering in an oxygen-free environment at room temperature. The influence of the power and pressure in the chamber on the deposition rate, as well as the structural and optical properties of Cu<sub>2</sub>O films, is studied. It is shown that the dependence of the deposition rate of Cu<sub>2</sub>O films on the sputtering power has a practically linear character and increases slightly with the increasing argon pressure in the chamber. It is found that all Cu<sub>2</sub>O films have a predominantly nanocrystalline structure consisting of columnar grains, whose average size increases from 10 to 30 nm with an increase in the sputtering power from 25 to 100 W and the chamber pressure from 3 × 10<sup>–3</sup> up to 7 × 10<sup>–3</sup> mbar. In this case, the Cu<sub>2</sub>O films have a relatively smooth surface with an average roughness in the range of 4.5 to 5.9 nm. It is established that for the deposition of Cu<sub>2</sub>O films with the largest grain size and low surface roughness, a sputtering power of 75 W and chamber pressure of 5 × 10<sup>–3</sup> mbar are optimal. It is shown that under this mode of magnetron sputtering the Cu<sub>2</sub>O film has two main diffraction peaks, which correspond to the orientations of the (111) and (200) crystal planes for the cubic phase of Cu<sub>2</sub>O, and also high optical absorption up to about 600 nm and band gap width 2.18 eV. Prototypes of solar cells based on the ZnO/Cu<sub>2</sub>O heterojunction by the method of magnetron sputtering at room temperature and their volt-ampere characteristics are studied. The obtained results can be used in the development of structures and technological processes for the formation of solar cells on glass and flexible substrates using the magnetron sputtering method.</p>

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Study of Deposition Modes of Cu2O Films by the RF Magnetron Sputtering Method for Use in Solar Cell Structures

  • 期刊论文

  • 发表日期：

    2025年2月1日

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  • A. V. Saenko,
  • V. V. Zheits,
  • Z. E. Vakulov,
  • V. A. Smirnov

摘要

Abstract

Cu2O films are deposited by the method of radio frequency (RF) magnetron sputtering in an oxygen-free environment at room temperature. The influence of the power and pressure in the chamber on the deposition rate, as well as the structural and optical properties of Cu2O films, is studied. It is shown that the dependence of the deposition rate of Cu2O films on the sputtering power has a practically linear character and increases slightly with the increasing argon pressure in the chamber. It is found that all Cu2O films have a predominantly nanocrystalline structure consisting of columnar grains, whose average size increases from 10 to 30 nm with an increase in the sputtering power from 25 to 100 W and the chamber pressure from 3 × 10–3 up to 7 × 10–3 mbar. In this case, the Cu2O films have a relatively smooth surface with an average roughness in the range of 4.5 to 5.9 nm. It is established that for the deposition of Cu2O films with the largest grain size and low surface roughness, a sputtering power of 75 W and chamber pressure of 5 × 10–3 mbar are optimal. It is shown that under this mode of magnetron sputtering the Cu2O film has two main diffraction peaks, which correspond to the orientations of the (111) and (200) crystal planes for the cubic phase of Cu2O, and also high optical absorption up to about 600 nm and band gap width 2.18 eV. Prototypes of solar cells based on the ZnO/Cu2O heterojunction by the method of magnetron sputtering at room temperature and their volt-ampere characteristics are studied. The obtained results can be used in the development of structures and technological processes for the formation of solar cells on glass and flexible substrates using the magnetron sputtering method.